| 英*** OXFORD System 100 等離子刻蝕與沉積設備
該設備是***個靈活和功能強大的等離子體刻蝕和淀積工藝設備。 采用真空進樣室進樣可進行快速的晶片更換、采用多種工藝氣體并擴大了允許的溫度范圍。
具有工藝靈活性，適用于化合物半導體，光電子學，光子學，微機電系統和微流體技術， PlasmalabSystem100可以有很多的配置，詳情如下。
主要特點
· 可處理8 "晶片，也具有小批量（6 × 2"）預制和試生產的能力
· 選擇單晶片/批處理或盒式進樣，采用真空進樣室。 該PlasmalabSystem100可以集成到***個集群系統中，采用中央機械手傳送晶片，生產工藝中采用全片盒到片盒晶片傳送. 采用***系列的電極進行襯底溫度控制，其溫度范圍為-150 ° C至700° C · 用于終端檢測的激光干涉和/或光發射譜可安裝在Plasmalab System100以加強刻蝕控制 · 選的6 或12路氣箱為工藝流程和工藝氣體提供了選擇上的靈活性，并可以放置在遠端，遠離主要工藝設備
工藝
***些使用Plasmalab System100等離子刻蝕與沉積設備的例子：
· 低溫硅刻蝕，深硅刻蝕和SOI工藝，應用于MEMS ，微流體技術和光子技術 · 用于激光器端面的III - V族刻蝕工藝，通過刻蝕孔、光子晶體和許多其他應用，材料范圍廣泛（InP, InSb, InGaAsP, GaAs, AlGaAs, GaN, AlGaN,等） · GaN、AlGaN等的預生產和研發工藝，比如HBLED和其它功率器件的刻蝕 · 高品質，高速率SiO2沉積，應用于光子器件 · 金屬（Nb, W）刻蝕 The equipment is a flexible ａnd powerful plasma etching ａnd deposition process equipment.The use of vacuum injection chamber allows for rapid wafer replacement, the use of a variety of process gases, ａnd the expansion of the permissible temperature range. With process flexibility for compound semiconductors, optoelectronics, photonics, mems ａnd microfluidics, PlasmalabSystem100 can be configured in a number of configurations, as detailed below. The main features · capable of handling 8 "wafers, as well as small batch (6 × 2") prefabrication ａnd pilot production · ｓelect single chip/batch or cartridge injection, ａnd use vacuum injection chamber.The PlasmalabSystem100 can be integrated into a cluster system, using a central manipulator to transfer wafers, ａnd a full box-to-box wafer process. Substrate temperatures are controlled using a series of electrodes, ranging from -150 ° C to 700° C · laser interference and/or optical emission spectra for terminal detection may be installed at Plasmalab System100 to enhance etching control · the selected 6 or 12 way airboxes provide flexibility in the selection of process flows ａnd process gases ａnd can be placed remotely away from the main process equipment process Some examples using Plasmalab System100 plasma etching ａnd deposition equipment: · low temperature silicon etching, deep silicon etching ａnd SOI process, applied to MEMS, microfluidics ａnd photonic technologies · a wide range of materials (InP, InSb, InGaAsP, GaAs, AlGaAs, GaN, AlGaN, etc.) through etchant holes, photonic crystals, ａnd many other applications · pre-production ａnd r&d processes of GaN, AlGaN, etc., such as etching of HBLED ａnd other power devices · high quality, high rate SiO2 deposition, applied to photonic devices · metal (Nb, W) etching
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